Measurement of Distance-dependent Multiple Upsets of Flip-Flops in 65nm CMOS Process
نویسندگان
چکیده
We measured neutron-induced SEUs (Single Event Upsets) and MCUs (Multiple Cell Upsets) on FFs in a 65 nm bulk CMOS process. Measurement results show that maximum MCU / SEU ratio is 30.6% and is exponentially decreased by the distance between latches on FFs.
منابع مشابه
Measurement Results of Multiple Cell Upsets on a 65nm Tapless Flip-Flop Array
We measured single event upsets (SEUs) and multiple cell upsets (MCUs) of a flip-flop array in a 65nm bulk CMOS process using accelerated white neutron beams. The flipflop array embeds 84,000 FFs constructing a 84,000bit shift register. Its cell structure is so-called tapless, in which no standard cell contains any well tap. Measurement results from 26 DUTs including 2.2Mbit FFs show that both ...
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